![]() ![]() 12 As a result, it is of significance to develop a carbon-free molecular doping technology. However, organic molecules often introduce a large number of carbon-related defects during the doping process, which will significantly reduce the electrical activity of phosphorus dopants in particular when the dopant concentration is low (∼10 16 cm −3). At present, the dopants, including phosphorus, 5–7 boron, 8 nitrogen, 9 arsenic, 10 and antimony, 11 have been successfully introduced to silicon by SAMM using commercial or synthetic reagents. The diversity of organic precursors and the flexibility of the self-assembly process make the monolayer doping technique more attractive and controllable. It can be potentially used to fabricate Si-based quantum circuits at a large scale when combined with top-down nanofabrication techniques. 1–3 The self-assembled molecular monolayer (SAMM) doping as a promising technology has the advantage of forming atomically thin delta doping 4 with no physical damage. The precise placement of dopant atoms in semiconductors is of great significance for the development of solid-state quantum circuits.
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